New dark current component of InGaAs/InP HPDs confirmed by DLTS

摘要

The dark current of In_(0.47) Gao_(0.53) As/InP heterojunction photodiodes (HPDs) was analysed. We found that there exists a new dark current component-deep level-assisted tunnelling current. DLTS was used to measure the In_(0.47)Ga_(0.53)As/InP HPDs. An electronic trap which has a thermal activation energy of 0. 44 eV, level concentration of 3.10 x 10~(13) cm~(-3) and electronic capture cross section of 1.72 x 10~(12) cm~2 has been found. It' s existence results in the new tunnelling current.