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High-quality MOVPE butt-joint integration of InP/AlGaInAs/InGaAsP-based all-active optical components

机译:基于Inp / alGaInas / InGaasp的全有源光学元件的高质量mOVpE对接集成

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摘要

In this paper, we demonstrate the applicability of MOVPE butt-joint regrowth for integration of all-active InP/AlGaAs/InGaAsP optical components and the realization of high-functionality compact photonic devices. Planar high-quality integration of semiconductor optical amplifiers of various epi-structures with a multi-quantum well electro-absorption modulator has been successfully performed and their optical and crystalline quality was experimentally investigated. The regrown multi-quantum well material exhibits a slight bandgap blue-shift of less than 20 meV, when moving away from the regrowth interface. In closest vicinity to the mask, the growth profile revealed a bent-up shape which is associated with an increase in the bandgap energy resulting from the combined effect of growth rate suppression and higher Ga concentration. This increase in bandgap energy makes the interface partially transparent (thus beneficial for unaffected light transmission) and forces carriers away from possible interfacial defects. The internal reflectivity below 2.1×10-5 ensures minimization of detrimental intracavity feedback.
机译:在本文中,我们演示了MOVPE对接再生长可用于集成所有有源InP / AlGaAs / InGaAsP光学组件并实现高功能紧凑型光子器件的过程。已经成功地进行了各种外延结构的半导体光放大器与多量子阱电吸收调制器的平面高质量集成,并通过实验研究了它们的光学和晶体质量。当从再生长界面移开时,再生长的多量子阱材料显示出小于20 meV的带隙蓝移。在最靠近掩模的位置,生长轮廓显示出弯曲的形状,该形状与由生长速率抑制和较高的Ga浓度的综合作用导致的带隙能量增加有关。带隙能量的增加使界面部分透明(因此有利于不受影响的光传输),并使载流子远离可能的界面缺陷。低于2.1×10-5的内部反射率可确保减少有害的腔内反馈。

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