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Yield Test Structures Accelerate Learning

机译:良率测试结构可加速学习

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By employing large-area yield test structures early in the process development cycle, engineers rapidly identify the most significant yield detractors. Nick Atchison and Ron Ross of Silicon Systems (Santa Cruz, Calif.) developed new test structures they included in the reticle sets in the first few products using a 0.8 μm BICMOS process. The yield structures identified two main problems — poly-poly leakage caused by poly stringers and metal 2-metal 2 leakage caused by TiW stringers. The corrected problems accounted for 80% of the total yield improvement attained from first silicon testing to full production. Optimum yield was reached in six months.
机译:通过在过程开发周期的早期采用大面积的成品率测试结构,工程师可以快速确定最重要的成品率降低因素。 Silicon Systems的Nick Atchison和Ron Ross(加利福尼亚州圣克鲁斯)使用0.8μmBICMOS工艺开发了新的测试结构,并将其包括在前几批产品的标线版中。良率结构确定了两个主要问题-由多晶桁条引起的多晶多晶硅泄漏和由TiW桁条引起的金属2-金属2泄漏。从首次硅测试到全面生产,已纠正的问题占总产量提高的80%。在六个月内达到了最佳产量。

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