ALD/PVD Barrier Reduces RC and Improves Reliability

摘要

The integration of ALD TaN/PVD Ta barrier in a 65 nm-like Cu BEOL inter-connect was characterized based on physical gap fill, electrical parametric yield and SM reliability performance. The new ALD TaN process demonstrated good results on all three aspects with 65 nm like via structure. Within the ALD TaN and PVD Ta thickness process windows studied, the ALD integration sequence demonstrated good yield and reliability, equivalent to the PVD baseline. An RC reduction of up to 16% was achieved relative to the PVD baseline.d