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Intel Talks About Double Exposure for Mainstream Manufacturing

机译:英特尔谈论主流制造的双重风险

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When Intel (and soon thereafter, the rest of the industry) made the decision to pull the plug on 157 nm litho development, the path to advanced lithography suddenly became clearer: extension of 193 nm (ArF) as far as possible, followed by extreme ultraviolet (EUV). Then 193 nm immersion lithography hit the scene and made lithographers envision patterning of perhaps 45 nm or even 32 nm features using ArF with water, followed by higher-index media and lenses. Now, there is yet another scenario in town for extending ArF: double exposure technology.
机译:当英特尔(以及此后不久,该行业的其他公司)决定取消157 nm光刻技术的发展时,先进光刻技术的道路突然变得更加清晰:尽可能扩展193 nm(ArF),然后扩展至极限。紫外线(EUV)。然后193 nm浸没式光刻技术问世,并让光刻师设想使用ArF和水,然后是高折射率介质和透镜,对大约45 nm甚至32 nm的特征进行构图。现在,城镇中还有另一种扩展ArF的方案:双重曝光技术。

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