Dynamic Characteristics Analysis of 3,300 V Full SiC Power Module by New Equivalent Circuit

摘要

Silicon Carbide (SiC) devices are promising candidates for high power, high speed, and high temperature switches owing to their superior properties. We have been developing SiC based 3,300 V class metal-oxide-semiconductor field-effect transistors (MOSFETs) and schottky-barrier diodes (SBDs). Stray inductance in the module and the great current changing rate with high speed switching may cause excessive voltage overshooting. Although equivalent circuits are effective for stray inductance analysis, previous equivalent circuit studies covered only a partial area of the entire module. This paper proposes a new method for the dynamic characteristics analysis using the precise equivalent circuit of the entire module.