FABRICATION OF TUNGSTEN NANOWIRES BY FOCUSED ION BEAN CHEMICAL VAPOUR DEPOSITION AND THEIR IN-SITU ELECTRICAL CHARACTERIZATION

摘要

We report on the fabrication of W nanowires on SIO_2 substrate using focused ion beam induced deposition (FIB-CVD) and studies of Ⅰ-Ⅴ characteristics of the W nanowires have been investigated. The electrical resistivity of the material of FIB fabricated nanowires are found to be more than that of the bulk material. Also, the resistivity of W nanowires of fixed dimensions varies as a function of beam current used for their FIB deposition. An increment in the resistivity has been explained on the basis of high contamination of C, Qa etc. present in the FIB fabricated nanostructures.