Correlation Between the Growth Direction,Morphology and Defect Luminescence in Aluminum Nitride Nanowires Synthesized Through Direct Nitridation Method

摘要

The AIN nanowires with smooth and sawtoothed surface were synthesized in different experimental condition by direct reaction Al with N_2. We observed a strong correlation between the growth direction, morphology and defect luminescence in two types of AIN nanowires. Smooth AIN nanowires with uniform diameter grow preferentially along the direction perpendicular to [0001], whereas, the rough AIN nanowires with sawtoothed surface grow preferentially along the [0001] direction. The latter enhanced the intensity of emission band, which may be related to the surface condition of AIN nanowires. The defect luminescence mechanisms of AIN nanowires with different morphology are discussed.