SILICON DETECTORS OPERATING BEYOND LHC CONDITIONS: SCENARIOS FOR RADIATION FIELDS AND DETECTOR DEGRADATION

摘要

The behaviour of silicon detectors obtained in different crystal growth technologies for hypothetical use in detector systems at LHC, SLHC, VLHC is taken into discussion, in order to evaluate which material is harder to irradiation and consequently to minimise the degradation of device parameters in conditions of long time operation. Physics requirements and different scenarios to LHC up-grade are considered.