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首页> 外文期刊>Review of Scientific Instruments >Note: Measuring dezincification of brass by Schottky barrier diodes formed between semiconductor corrosion products and brass
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Note: Measuring dezincification of brass by Schottky barrier diodes formed between semiconductor corrosion products and brass

机译:注:通过半导体腐蚀产物和黄铜之间形成的肖特基势垒二极管测量黄铜的脱锌

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摘要

A newly developed method is presented for measuring dezincification on the surface of brass from a consideration of the forward and reverse bias potential drop across a Schottky barrier diode formed between n-type zinc oxide or p-type copper (I) oxide corrosion products and the brass substrate. Electrical connection to the corrosion product is made with zinc and platinum tipped probes, approximately 1 mm diameter. Comparison with x-ray photoelectron spectroscopy shows the difference between the forward and reverse bias potential drop to be dependent on the relative abundance of the corrosion products and the work function of the metal probe. This difference, for a zinc tipped probe, gives a statistically significant correlation to the surface zinc to copper ratio and the degree of dezincification. Details of the setup, operation, and testing of a portable instrument designed to measure dezincification of brass by this method are given. © 2010 American Institute of Physics
机译:考虑到在n型氧化锌或p型氧化铜腐蚀产物与金属之间形成的肖特基势垒二极管上的正向和反向偏置电势下降,提出了一种新的测量黄铜表面脱锌的方法。黄铜基板。腐蚀产物的电连接是通过直径约1毫米的锌和铂尖探针进行的。与X射线光电子能谱的比较表明,正向和反向偏置电位降之间的差异取决于腐蚀产物的相对丰度和金属探针的功函数。对于锌尖探针,这种差异与表面锌铜比和脱锌程度具有统计学上的显着相关性。给出了用于通过这种方法测量黄铜脱锌量的便携式仪器的设置,操作和测试的详细信息。 ©2010美国物理研究所

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