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Comparative Study of Optical and Electrical Properties of CdSerSm and CdSe: Nd Nanocrystalline Thin Film

机译:CdSerSm和CdSe:Nd纳米晶薄膜的光电性能比较研究

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摘要

Rare earth (Sm or Nd) doped CdSe nanocrystalline thin film were grown onto the glass substrate by chemical bath deposition (CBD) method. Crystal structure were determined by XRD. The emission spectra of photoluminescence (PL) for Sm or Nd doped CdSe nanocrystalline thin film lies at 601nm. The band edge luminescence is responsible for PL. CdSe:Sm (6 ml, 0.01 M) and CdSe:Nd (4 ml, 0.01 M) give the highest PL intensity.
机译:通过化学浴沉积(CBD)方法将掺杂了稀土元素(Sm或Nd)的CdSe纳米晶体薄膜生长到玻璃基板上。晶体结构通过XRD确定。 Sm或Nd掺杂的CdSe纳米晶薄膜的光致发光(PL)发射光谱位于601nm。带边缘发光是造成PL的原因。 CdSe:Sm(6 ml,0.01 M)和CdSe:Nd(4 ml,0.01 M)给出最高的PL强度。

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