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Research Disclosure

机译:研究披露

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The present development relates to Wafer Stages, such as may be applied in lithographic machines and processes. More specifically,the present development relates to Increasing a wafer stage pressure to improve defectivity by adding a diffuser in center of the wafer stage. Wafer defectivity on EUV system is a challenge for Extreme Ultraviolet lithography at this moment. A potential solution is flow shielding. However, despite such improvement, a present analysis indicates extra improvement may still be required. The main idea of (he present development is to increase a wafer stage pressure by adding an extra H2 inlet, while keeping pumps at their designed operation mode, so as to overcome the disadvantages/risks due to switching off pumps or pump tuning. Accordingly, an diffuser is added in center of the wafer stage e.g. with separate controller to regulate pressure to higher levels. The added diffusor may be used to disperse the incoming gas to vacuum with low velocity.
机译:本发明的开发涉及晶片级,例如可以在光刻机和过程中应用。 更具体地,本发明的开发涉及通过在晶片级的中心添加扩散器来提高晶片级压力以改善缺陷。 euv系统上的晶圆缺陷是目前极端紫外线光刻的挑战。 潜在的解决方案是流动屏蔽。 然而,尽管存在这种改进,但目前的分析表明可能仍然需要额外的改进。 (他呈现开发的主要思想是通过添加额外的H2入口来增加晶片级压力,同时保持泵在其设计的操作模式下,以克服由于关闭泵或泵调谐而导致的缺点/风险。因此, 扩散器被添加在晶片级的中心,例如,具有单独的控制器来调节压力以更高的水平。添加的扩散器可用于将进入的气体分散到具有低速的真空。

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    《Research Disclosure》 |2021年第688期|2168-2168|共1页
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