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Research Disclosure

机译:研究披露

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To reduce the transmission loss of extreme ultraviolet (HUV) radiation in an EUV lithographic apparatus, an optical column of the EU V lithographic apparatus is commonly located within a near-vacuum vessel. The near-vacuum vessel usually comprises a small amount of hydrogen gas at low pressure (e.g. a few Pa) which, during operation, is photo-ionized by the EUV radiation to form a hydrogen plasma. The hydrogen plasma limits deterioration of the reflectivity of mirrors in the optical column due to hydrocarbon impurities, and also limits surface oxidation through water and/or oxygen impurities adsorbing to the EUV irradiated surface. The hydrogen plasma may, however, produce volatile hydrides, radicals and ions which may deposit on surfaces in the HUV lithographic apparatus, and particularly unfavourably on mirrors, pellicles and/or reticles. Such deposition of volatile particles may create extra adsorption losses in the HUV lithographic apparatus, in particular if the deposits are partially or fully oxidized.
机译:为了降低EUV光刻设备中的极端紫外(HUV)辐射的传输损失,EU V光刻设备的光学塔通常位于近真空容器内。近真空容器通常在低压(例如,少数PA)下包括少量氢气,其在操作期间是通过EUV辐射的光电电离,形成氢等离子体。由于烃杂质,氢等离子体限制了光学塔中的镜子反射率的劣化,并且还将表面氧化通过吸附到EUV照射表面的水和/或氧气杂质。然而,氢等离子体可以产生挥发性氢化物,自由基和离子,其可以在Huv光刻设备中的表面上沉积在表面上,特别是在镜子,颗粒和/或掩模上的镜子中特别不利。这种挥发性颗粒的沉积可以在HUV光刻设备中产生额外的吸附损失,特别是如果沉积物部分或完全氧化。

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    《Research Disclosure》 |2020年第674期|705-706|共2页
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