Investigation of ohmic contact to P-type CdTe:P using ac and dc techniques

摘要

The effect of ohmic contact to P-type CdTe:P single crystal has been studied for different back contacts: Au and graphite doped with Cu, Te and CdCl_2. The ac electrical measurements were performed at room temperature in the frequency range 10~-1 Hz to 10~6 Hz. The results were compared with dc measurements at the same temperature. Al/CdTe:P Schottky diodes were fabricated using thermal evaporation technique. The same applies for Au back contacts while for the others, Cu, Te and CdCl_2, powder forms were mixed in fixed portions with graphite.