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Thermoelectric properties of porous SiC/C composites

机译:多孔SiC / C复合材料的热电性能

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We developed a porous SiC/C composite by oxidizing a SiC/C composite made from a mixed powder of wood charcoal and SiO_2 (32-45 μm) by pulse current sintering at 1600 and 1800℃ under a N_2 atmosphere. The microstructures of the porous SiC/C composites with oxidation and the SiC/C composites without oxidation were analyzed by Raman spectroscopy and scanning electron microscopy (SEM). Raman spectra revealed the disappearance of excess carbon and the presence of β-SiC. The porous microstructure was monitored by SEM observation as a function of the heat treatment temperature. The thermoelectric properties of porous SiC/C composites with oxidation and SiC/C composites without oxidation were investigated by measuring the Seebeck coefficient, the electrical conductivity and thermal conductivity. The Seebeck coefficient of all samples revealed n-type conduction, and the absolute value of the Seebeck coefficient for the porous SiC/C samples with oxidation was much larger than that for the SiC/C samples without oxidation. For the electrical conductivity the reverse is true. Only the thermal conductivity of the SiC/C sample heated to 1800 ℃ without oxidation was high initially and stayed rather high. In general, the thermoelectric properties improved at higher measurement temperatures indicating their suitability for high-temperature thermoelectric conversion. A maximum figure of merit of 2.01 × 10~(-5)K~(-1) was obtained at 700 ℃ in porous SiC/C samples sintered at 1800 ℃ with oxidation.
机译:我们通过在N_2气氛下在1600和1800℃下通过脉冲电流烧结将木炭和SiO_2(32-45μm)的混合粉末制成的SiC / C复合材料氧化,从而开发出多孔SiC / C复合材料。用拉曼光谱和扫描电子显微镜(SEM)分析了多孔氧化SiC / C复合材料和无氧化SiC / C复合材料的微观结构。拉曼光谱揭示了过量碳的消失和β-SiC的存在。通过SEM观察监测多孔微结构与热处理温度的关系。通过测量塞贝克系数,电导率和热导率,研究了多孔氧化的SiC / C复合材料和无氧化的SiC / C复合材料的热电性能。所有样品的塞贝克系数都显示出n型导通,并且多孔氧化SiC / C样品的塞贝克系数的绝对值比未氧化的SiC / C样品的塞贝克系数的绝对值大得多。对于电导率,则相反。最初加热至1800℃而未氧化的SiC / C样品的热导率较高,并保持较高。通常,在较高的测量温度下热电性能得到改善,表明它们适用于高温热电转换。在1800℃氧化烧结的多孔SiC / C样品中,700℃时的最大品质因数为2.01×10〜(-5)K〜(-1)。

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