Recent Progress in Semiconductor Thin Film Technology

摘要

Laser irradiation, pulse laser deposition and various epitaxial technologies are used for manufacturing novel micro(nano)electronic devices. IR-detectors are of special interest, in particular, their stable functionality under environmental effects seem to be important. None of the optoelectronic active elements operates out of its environment, i.e. we have to consider the unavoidable effect of atmospheric oxygen on all investigated characteristics. Inorganic solids with various band gaps are usually used in industry as optical materials. Many metallic oxides have wide band gaps, because of the significant contribution of the ionic character of the chemical bonds between metallic cations and oxide ions. However, their application for the design of different active elements for optoelectronics requires more detailed information concerning the formation and properties of the corresponding compound. This review discusses this problem and the patents concerning the semiconductor production and assembly using thin film technology.