Preparation of 5N high purified indium by the method of chemical puri- fication-electrolysis

摘要

The application of indium requires high purity indium as material. 5N high purity indium had been prepared by the method of a combination of chemically smelting and electrolysis. Smelting time was 10 min, the abstraction rate of cadmium was 80/100-90/100 when used solution of I_2-KI and glycerine to smelt indium. 4N metal indium was used as anode, high purity indium as cathode, In-2 (SO_4)_3-H_2SO_4 system as electrolyte, and In content is 100 g/L, pH 2-3 and current density 80-100 a/m~2.