The surface damage and the damage depth in wire-cut silicon wafers and inner-dimeter (ID) cut silicon wafers were studied by means of thickness meter, scanning election microscopy (SEM) and double crystal X-ray diffractometer. The results show that the surface of wire-cut silicon wafers is rougher that the of ID-cut silicon wafers and the surface damage in wire-cut silicon wafers is smaller than that in ID-cut silicon wafers. The possible reasons for the generation of surface damaging wire-cut silicon wafers were also discussed.
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