Modeling of Avalanche Cascade Multiplier of Primary Photoelectrons in the Reversely Biased pn-i-pn Structure

摘要

Modeling of avalanche cascade multiplier of primary photoelectrons in the reversely-biased pn-i-pn structure with positive feedback with respect to the drift current between p-n junctions is performed. System of equations for a diffuse-drift model (DDM) of reversely-biased p-n junctions with impact ionization is considered to be the object of investigation. The main characteristics of the photomultiplier on the basis of pn-i-pn structures, i.e. gain, operating speed and noise of avalanche multiplication, are calculated and compared with those of avalanche photodiode (APD).