Three-Dimensional Field Models for Reverse Biased P-N Junctions

摘要

In order to obtain reliable quantitative information on the electrostatic field associated with reverse-biased p-n junctions and on the distribution of dopants, the physics of the so-called dead layer and the influence of charged oxide layers are of paramount importance. To this purpose, experimental observations near the edge of a TEM sample can be useful. In these conditions, however, phase computations required to interpret the experimental results are very challenging as the problem is intrinsically three-dimensional. In order to cope with this problem, a mixed analytical-numerical approach is presented and discussed.