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Variations in the midlatitude and equatorial ionosphere during the October 2003 magnetic storm

机译:2003年10月磁暴期间中纬度和赤道电离层的变化

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摘要

The October 2003 geomagnetic storm (often called the Halloween storm) was one of the largest storms (as measured by Dst) yet recorded. The storm-induced synoptic-scale changes in the ionosphere's plasma content and density can be viewed through space weather maps created by objective analysis algorithms. For this study, these maps, which specify the electron density in altitude, latitude, and longitude, are created by the ionospheric data assimilation three dimensional (IDA3D), a three-dimensional variation algorithm of the ionospheric electron density. These maps, representing the average conditions in the ionosphere over a 15 min sampling time, show how dramatically the ionosphere changed during the Halloween storm. Following the southward turning of the interplanetary magnetic field, the dayside electron content is significantly reduced in the equatorial ionosphere between ±18° magnetic latitude and is enhanced poleward of this latitude. This is the expected behavior when the equatorial fountain is enhanced by a strong penetration electric field. In addition, the electron content is significantly increased in the dayside midlatitude ionosphere, which corresponds to a storm-enhanced density (SED) plume. Above 40° magnetic latitude, the dayside plasma content is significantly reduced in the regions adjacent to the SED structure, which enhances the electron content gradient. Electron density maps in the altitude-magnetic latitude plane show an increase in the topside electron densities within an SED plume.
机译:2003年10月的地磁风暴(通常称为万圣节风暴)是迄今最大的风暴(按Dst测得)之一。风暴引起的电离层血浆含量和密度的天气尺度变化可以通过客观分析算法创建的空间天气图查看。对于本研究,这些图指定了海拔,纬度和经度的电子密度,是由电离层电子同化三维(IDA3D)(电离层电子密度的三维变化算法)创建的。这些地图代表了15分钟采样时间内电离层的平均状况,显示了电离层在万圣节暴风雨期间发生了多大变化。随着行星际磁场向南转向,赤道电离层在±18°磁纬度之间的日间电子含量显着降低,并且在该纬度的极点处得到增强。当赤道喷泉通过强穿透电场增强时,这是预期的行为。此外,白天中纬度电离层的电子含量显着增加,这对应于风暴增强密度(SED)羽流。高于40°磁纬度时,靠近SED结构的区域中的白天血浆含量显着降低,这会增强电子含量梯度。海拔-磁性纬度平面中的电子密度图显示SED羽流中顶侧电子密度的增加。

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