A transistor with thyratron characteristics and related devices

摘要

A semi-conductor device with thyratron-like input characteristic is obtained by immersing, during the alloy process, a tungsten whisker into the collector contact of an npn-junction transistor with high base resistivity. Details of production and electrical performance are given. The radial voltage drop which is set up in the base layer causes a restriction of carrier transport to a region of small cross-section. This permits the construction of devices with more than one output electrode. Finally a special structure for triggering by radiation and a symmetrical switching transistor have been studied.