RADICAL IONS OF OLIGOSILANE AND POLYSILANE

摘要

In order to elucidate electronic properties of polysilane Si-Si skeleton, the radical ions generated by γ-irradiation of polycyclohexylmethylsilane and polymethylphenylsilane were studied by ESR and optical absorption methods. The ion radicals of permethyloligosilanes (Si_4 ～ Si_8) have also been studied for comparison. The observed results suggest that the unpaired electron is localized on a limited region of Si-Si skeleton in the polymers and it is delocalized on the whole Si-Si skeleton of the oligomers.