The radiation efects on hole drift mobility in polysilane derivatives were studied in the present paper. the values of hole drift mobility (about 10~4 cm~2/V.s) obtained by the DC Time-of-Flight (TOF) measurement were improved by ion beam irradiation for poly(methylphenylsilane) (PMPS) and poly(di-n-hexylsilane) (PDHS). The irradiated PMPS showed five times higher values of hole drift mobility than the non irradiated one. Their low photo-induced carrier yield, one of the highest barrier to use polysilanes as photoconductors, was also improved by the irradiation. The mechanism of the mobility improvement will be discussed in relation to the model of changes in the silicon skeleton structure induced by the radiation.
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