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Benchmarking System-Level Performance of Passive and Active Plasmonic Components: Integrated Circuit Approach

机译:无源和有源等离子组件的系统级性能基准测试:集成电路方法

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摘要

Using criteria of bandwidth and energy consumption for signal guiding and processing, system-level figures of merit (FOMs) for both passive and active plasmonic circuit components are introduced, benchmarking their performance for the realization of high-bandwidth optical data communication on a chip. The FOM for passive plasmonic interconnects has been derived in terms of the system-level performance of the plasmonic circuitry, emphasising the bandwidth and power dissipation densities. These parameters are linked to the local waveguide characteristics, such as the mode propagation length, bend radius, and mode size. The FOM enables a comparison of the main types of plasmonic waveguides and can serve as a benchmark for future designs of photonic integrated circuits. A FOM for active photonic or plasmonic electro-optical, thermo-optical, and all-optical modulators is also derived to reflect the same benchmarking principles. A particular emphasis is made on establishing a practically oriented benchmark where the integral performance of the circuit, not the size or energy consumption of individual components, plays the defining role.
机译:使用带宽和能量消耗的准则进行信号引导和处理,介绍了无源和有源等离激元电路组件的系统级品质因数(FOM),对它们在芯片上实现高带宽光数据通信的性能进行了基准测试。被动等离子互连的FOM是根据等离子电路的系统级性能得出的,强调了带宽和功耗密度。这些参数与局部波导特性相关,例如模式传播长度,弯曲半径和模式大小。 FOM可以对等离子波导的主要类型进行比较,并且可以作为未来光子集成电路设计的基准。有源光子或等离激元电光,热光和全光调制器的FOM也可以反映相同的基准原理。特别强调要建立一个以实践为导向的基准,其中电路的整体性能(而不是单个组件的尺寸或能耗)起着决定性的作用。

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