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Intrinsic single-domain switching in ferroelectric materials on a nearly ideal surface

机译:接近理想表面的铁电材料的本征单域开关

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Ferroelectric domain nucleation and growth in multiferroic BiFeO_3 is studied on a single-domain level by using piezoresponse force spectroscopy. Variation of local electromechanical response with dc tip bias is used to determine the size of the domain formed below the conductive scanning probe tip. The domain parameters are calculated self-consistently from the decoupled Green function theory by using tip geometry determined from the domain wall profile. The critical parameters of the nucleating domain and the activation energy for nucleation are determined. The switching mechanism is modeled by using the phase-field method, and comparison with experimental results shows that the nucleation biases are within a factor of ~ 2 of the intrinsic thermodynamic limit. The role of atomic-scale defects and long-range elastic fields on nucleation bias lowering is discussed. These measurements open a pathway for quantitative studies of the role of a single defect on kinetics and thermodynamics of first order bias-induced phase transitions and electrochemical reactions.
机译:使用压电响应力谱在单畴水平上研究了多铁性BiFeO_3中的铁电畴成核和生长。带有直流尖端偏置的局部机电响应的变化用于确定在导电扫描探针尖端下方形成的畴的大小。通过使用从畴壁轮廓确定的尖端几何形状,根据解耦的格林函数理论自洽地计算畴参数。确定成核域的关键参数和成核的活化能。利用相场法对切换机理进行了建模,并与实验结果进行了比较,结果表明成核偏差在固有热力学极限的约2倍之内。讨论了原子尺度缺陷和远距离弹性场对降低成核偏压的作用。这些测量结果为定量研究单一缺陷对一阶偏置诱导的相变和电化学反应的动力学和热力学的作用打开了一条途径。

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