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Imaging and manipulation of the competing electronic phases near the Mott metal-insulator transition

机译:莫特金属-绝缘体过渡附近竞争电子相的成像和操纵

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The complex interplay between the electron and lattice degrees of freedom produces multiple nearly degenerate electronic states in correlated electron materials. The competition between these degenerate electronic states largely determines the functionalities of the system, but the invoked mechanism remains in debate. By imaging phase domains with electron microscopy and interrogating individual domains in situ via electron transport spectroscopy in double-layered Sr_3(Ru_(1-x)Mn_x)_2O_7 (x = 0 and 0.2), we show in real-space that the microscopic phase competition and the Mott-type metal-insulator transition are extremely sensitive to applied mechanical stress. The revealed dynamic phase evolution with applied stress provides the first direct evidence for the important role of strain effect in both phase separation and Mott metal-insulator transition due to strong electron-lattice coupling in correlated systems.
机译:电子和晶格自由度之间的复杂相互作用会在相关的电子材料中产生多个几乎简并的电子态。这些退化的电子状态之间的竞争在很大程度上决定了系统的功能,但是所调用的机制仍存在争议。通过用电子显微镜成像相域并通过电子传输光谱法在双层Sr_3(Ru_(1-x)Mn_x)_2O_7(x = 0和0.2)中原位询问各个域,我们在实空间中显示了微观相竞争和Mott型金属-绝缘体转变对施加的机械应力极为敏感。所揭示的动态相演化和外加应力为应变效应在相分离和Mott金属-绝缘体转变中的重要作用提供了第一个直接证据,这是由于相关系统中的强电子-晶格耦合引起的。

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