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3D Layer Stacking, TSV to Replace DDR, Report Says

机译:报告称3D层堆叠,TSV取代DDR

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Lyon, france - Many expect current DDR, both the computer variety (DDR3/ DDR4) and the mobile variety (LPDDR3/LPDDR4), to reach the end of their road soon, as the DDR interface reportedly cannot run at data rates higher than 3.2Gbps in a traditional computer main memory environment. Thus several new DRAM memory architectures based on 3D layer stacking and TSV have evolved to carry memory technology forward, explains research group Yole Developpement in its recently released report on 3D ICs titled "3DIC & 2.5D TSV Interconnect for Advanced Packaging - 2014 Business Update."
机译:法国里昂-许多人期望计算机品种(DDR3 / DDR4)和移动品种(LPDDR3 / LPDDR4)的当前DDR很快就会走到尽头,因为据报道DDR接口不能以高于3.2的数据速率运行传统计算机主内存环境中的Gbps。研究小组Yole Developpement在其最近发布的3D IC报告“高级封装的3DIC和2.5D TSV互连-2014年业务更新”中解释说,因此,基于3D层堆叠和TSV的几种新的DRAM存储器架构已经演进,以推动存储技术向前发展。 ”

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