首页> 外文期刊>Pramana >Electron lucky-drift impact ionization coefficients of ZnS: Mn
【24h】

Electron lucky-drift impact ionization coefficients of ZnS: Mn

机译:ZnS:Mn的电子幸运漂移冲击电离系数

获取原文
获取原文并翻译 | 示例
       

摘要

Fit of the experimental data of ZnS : Mn by a modified lucky-drift formula has been performed using the least square algorithm. The fit agrees well with the experimental data only at high field. The best fitting parameters at high field are the mean free path of order 102.74 A and Keldysh factor, p_0 = 0.0138. A generalized Keldysh formula has been used, due to introduction of a soft threshold factor. The soft lucky-drift theory can also be used to calculate the impact ionization coefficients of high electron energy of ZnS: Mn without losing its physical significance compared to full band-structure Monte Carlo calculation with a remarkably reduced amount of computer resources. The curvature on semi-log plot of experimental impact ionization coefficient against the inverse of electric field is different from what is observed for other materials at low electric fields due to impact ionization of deep level impurities.
机译:使用最小二乘算法对ZnS:Mn的实验数据进行了修正的幸运漂移公式拟合。该拟合仅在高场时与实验数据非常吻合。高场的最佳拟合参数是阶数为102.74 A的平均自由程和Keldysh因子p_0 = 0.0138。由于引入了软阈值因子,因此使用了广义的Keldysh公式。与全带结构蒙特卡洛计算相比,软幸运漂移理论还可以用于计算ZnS:Mn高电子能量的碰撞电离系数,而不会失去其物理意义,而计算机资源的数量却大大减少。由于深水平杂质的碰撞电离,实验碰撞电离系数相对于电场逆的半对数图上的曲率不同于其他材料在低电场下的曲率。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号