eGaN™ FET-Silicon PowerShootOut Part 3: Power over Ethernet

摘要

The eGaN FET is a viable and efficient alternative to standard MOSFET solutions in Power over Ethernet (PoE) applications. These FETs enable higher operating frequencies that can be leveraged into reduced converter size and cost. Both 13 W and 26 W PoE eGaN FET converters were built and evaluated side by side with standard MOSFET designs. In every instance, eGaN FET converters exhibited higher efficiencies with the potential of reducing system cost over their MOSFET counterparts. PoE converters are widely used in digital networks to provide operat ing power to peripheral equipment through existing communication wiring, hence eliminating the need for separate power lines or local power adaptors. PoE controllers are located in the receiving/powered device (PD) as well as the power sourcing equipment (PSE).