Wide-Bandgap-Based Power Devices: Reshaping the power electronics landscape

摘要

For the last few years, the virtues of power devices based on gallium nitride (GaN) and silicon carbide (SiC) technologies have been well promoted. Now, with the availability of qualified devices from multiple suppliers and falling prices due to the rise in production and the use of larger substrates, more designers are adopting widebandgap (WBG)-based power devices in their new designs to get to the next level of performance, while others are looking to replace the maturing silicon (Si) with more robust emerging technologies.