机译:使用单栅极驱动器分析中压应用的级联碳化硅MOSFET
Aalborg Univ Dept Energy Technol Pontoppidanstr 111 Aalborg Denmark;
FLSmidth Airtech Vigerslev Alle 77 Copenhagen Denmark;
MOSFET; power semiconductor switches; silicon compounds; resistors; power semiconductor diodes; silicon; switching convertors; driver circuits; snubbers; wide band gap semiconductors; semiconductor device breakdown; power capacitors; zero current crossing; cascaded silicon carbide metal oxide semiconductor field effect transistors; single gate driver; medium voltage applications; medium voltage power supplies; electrostatic precipitators; industrial plants; high-voltage transformers; serialisation method; cascaded series-connection method; single external gate signal; integrated circuit emphasis simulation; resistor-capacitor-diode-snubber; series-connected devices; double pulse test; current levels; output voltage levels; wide band gap materials; electric breakdown voltage; silicon carbide devices; switching speed prediction; load dependence; discontinuous conduction mode; synchronous boost converter; voltage 1200; 0 V; voltage 2400; 0 V; current 250; 0 mA to 800; 0 mA; frequency 10; 0 kHz; SiC;
机译:碳化硅MOSFET高频应用的栅极驱动器:LV和MV应用更快增长的设计考虑
机译:具有可控峰值栅极电压的高速谐振栅极驱动器,用于碳化硅MOSFET
机译:具有单个外部栅极驱动器的3600 V / 80 A系列-并联的碳化硅MOSFET模块
机译:使用10 kV碳化硅(SiC)MOSFET进行中压(MV)操作的栅极驱动器的基准测试和鉴定
机译:用于低压集成电路应用的双栅CMOS设计和分析,包括绝缘体上硅MOSFET的物理建模。
机译:面向低电压低能耗的超薄绝缘体上硅MOSFET低频噪声行为的经验和理论模型
机译:导通和关断期间碳化硅mOsFET的电压变化分析