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550-W Ultraviolet Exciplex Source for Pulsed Power Applications

机译:适用于脉冲功率应用的550W紫外线激基灯源

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摘要

The investigation of a high output power, arc lamp exciplex ultraviolet (UV) source for pulsed power applications is presented. The arc lamp generates up to 550 W from XeF* exciplex radiation at 351 nm, totaling to nearly 0.15-mJ total radiated UV energy over the duration of the UV pulse. With an ellipsoidal reflector, the arc lamp produces 400 W/cm(2) and up to 0.1 mJ of UV light onto a 1-cm(2) area. A complete experimental investigation of the arc lamp for both XeCl* (308 nm) and XeF* (351 nm) exciplex sources operated under varying excitation and pressure conditions is reported. As an application, the arc lamp is successfully utilized as an illumination source for an intrinsically triggered, wide bandgap SiC photoconductive semiconductor switch (PCSS), where a PCSS ON-state resistance of 500 Omega is achieved.
机译:提出了一种高输出功率,用于脉冲功率应用的弧光灯激基紫外线(UV)源的研究。弧光灯从351 nm的XeF *激基复合物辐射产生高达550 W的能量,在UV脉冲的持续时间内,总辐射UV能量总计接近0.15 mJ。使用椭圆形反射镜,弧光灯可产生400 W / cm(2)的光,并在1 cm(2)的区域上产生高达0.1 mJ的紫外线。报告了在变化的激发和压力条件下对XeCl *(308 nm)和XeF *(351 nm)激基复合物源进行的弧光灯的完整实验研究。作为一种应用,弧光灯已成功用作本征触发的宽带隙SiC光电导半导体开关(PCSS)的照明源,在该开关中,PCSS导通状态电阻达到500Ω。

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