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机译:半型COSB中的压力调整结构和电子转换
Center for High Pressure Science and Technology Advanced Research Shanghai 201203 China;
School of Physics and Electronic Engineering Jiangsu Normal University Xuzhou 221116 China;
Materials Genome Institute Shanghai University Shanghai 200444 China;
Inovation and Integration Center of New Laser Technology Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences Shanghai 201800 China;
Center for High Pressure Science and Technology Advanced Research Shanghai 201203 China;
Center for High Pressure Science and Technology Advanced Research Shanghai 201203 China;
Center for High Pressure Science and Technology Advanced Research Shanghai 201203 China;
Center for High Pressure Science and Technology Advanced Research Shanghai 201203 China;
Materials Genome Institute Shanghai University Shanghai 200444 China;
School of Physics and Electronic Engineering Jiangsu Normal University Xuzhou 221116 China;
Center for High Pressure Science and Technology Advanced Research Shanghai 201203 China;
机译:DIRAC半型CD3AS2中的压力诱导的电子和结构相转变:拉曼研究
机译:Mn2CoSb化合物:结构,电子,传输和磁性
机译:正电子an没光谱研究部分Ba填充的热电CoSb_3的结构转变
机译:INAS / GASB量子阱中的电子带结构和半导体过渡
机译:具有不同电子性质的配体的过渡金属配合物的结构特征以及通过过渡金属配合物活化和官能化碳-氢键的机理。
机译:静电门控在二维材料中半导体到半金属的结构相变
机译:金属降硫键长度诱导从半导体到Zrx2中拓扑半导体的电子相变(x = se和te)
机译:在1T-Tise2中结构诱导的半金属到半导体的转变。