首页> 外文期刊>Physical review.B.Condensed matter and materials physics >Inversion in a four-terminal superconducting device on the quartet line. Ⅱ. Quantum dot and Floquet theory
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Inversion in a four-terminal superconducting device on the quartet line. Ⅱ. Quantum dot and Floquet theory

机译:在四端线上的四端超导装置中的反转。 Ⅱ。量子点和浮子理论

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摘要

In this paper, we consider a quantum dot connected to four superconducting terminals biased at opposite voltages on the quartet line. The grounded superconductor contains a loop threaded by the magnetic flux Φ. We provide Keldysh microscopic calculations and physical pictures for the voltage-V dependence of the quartet current. Superconductivity is expected to be stronger at Φ/Φ_0 = 0 than at Φ/Φ_0 = 1/2. However, inversion I_(q,c)(V,0) <I_(q,c)(V,1/2) is obtained in the critical current I_(q,c)(V,Φ/Φ_0) on the quartet line in the voltage-V ranges which match avoided crossings in the Floquet spectrum at (V,Φ/Φ_0= 0) but not at (V,1/2). A reduction in I_(q,c) appears in the vicinity of those avoided crossings, where Landau-Zener tunneling produces dynamical quantum mechanical superpositions of the Andreev bound states. In addition, π-0 and 0-π crossovers emerge in the current-phase relations as V is further increased. The voltage-induced π shift is interpreted as originating from the nonequilibrium Floquet populations produced by voltage biasing. The numerical calculations reveal that the inversion is robust against strong Landau-Zener tunneling and many levels in the quantum dot. Our theory provides a simple "Floquet level and population" mechanism for inversion tuned by the bias voltage V, which paves the way towards more realistic models for the recent Harvard group experiment where the inversion is observed.
机译:在本文中,我们考虑一种量子点,其连接到四个超导端子在四重奏线上的相对电压下偏置。接地超导体包含由磁通量φ螺纹的环。我们提供keldysh显微镜计算和物理图片,用于电流的电压-V依赖性。预期超导性比φ/φ_0= 1/2更强φ/φ_0= 0。但是,在四重奏上的临界电流I_(q,c)(v,φ/φ_0)中获得反转i_(q,c)(v,0)

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  • 来源
    《Physical review.B.Condensed matter and materials physics》 |2020年第24期|245436.1-245436.16|共16页
  • 作者

    Regis Melin; Benoit Doucot;

  • 作者单位

    Universite Grenoble-Alpes CNRS Grenoble INP Institut NEEL 38000 Grenoble France;

    Laboratoire de Physique Theorique et Hautes Energies Sorbonne Universite and CNRS UMR 7589 4 place Jussieu 75252 Paris Cedex 05 France;

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