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Energy landscape and diffusion kinetics of lithiated silicon: A kinetic activation-relaxation technique study

机译:锂化硅的能量景观与扩散动力学:动力学激活 - 松弛技术研究

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With large specific and volumetric capacity, lithiated silicon is an excellent anode for lithium-ion batteries. Its application is challenged today, however, by the formation of an amorphous a-LixSi phase associated with a large volume change that occurs at relatively low Li concentration and remains only very partly understood at the microscopic level. In this paper, we characterize the full energy landscape associated with the onset of Li insertion in crystalline Si as a first step for understanding the lithiation process. We identify the diffusion mechanisms and migration energies for one to ten Li atoms in a Si crystal as well as the average lifetime of small lithium aggregates, using the kinetic activation-relaxation technique (kART), an off-lattice kinetic Monte-Carlo method with on-the-fly catalog building capabilities coupled to a newly developed force field (ReaxFF) used as potential based on ab initio results.We show that the short lifetimes of the bound states (from meV to ten meV) mean that Li atoms move in the interstitial sublattice with little interactions, explaining how high Li concentration in Si can be reached.
机译:具有大的具体和体积容量,锂化硅是锂离子电池的优异阳极。然而,它的申请今天受到挑战,通过形成与具有相对低锂浓度的大体积变化相关的无定形A-Lixsi相,并且在微观水平下仍然仅被部分地理解。在本文中,我们表征了与锂插入晶体Si中的锂爆发相关的完整能量景观,作为理解锂化过程的第一步。使用动力学激活 - 松弛技术(KART),识别Si晶体中的一至10 Li原子的扩散机制和迁移能量,以及小锂聚集体的平均寿命。在飞行目录中,建筑能力耦合到新开发的力字段(Reaxff)作为基于AB Initio结果的潜力。我们表明界定状态的短时间内(来自MEV至10 MeV)意味着李原子进入间隙子分子几乎没有相互作用,解释了可以达到锂锂浓度的高浓度。

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  • 来源
    《Physical Review. B, Condensed Matter》 |2017年第14期|134118.1-134118.12|共12页
  • 作者单位

    Departement de physique and Regroupement quebecois sur les materiaux de pointe Universite de Montreal C.P. 6128 Succursale Centre-Ville Montreal Quebec Canada H3C 3J7;

    Departement de physique and Regroupement quebecois sur les materiaux de pointe Universite de Montreal C.P. 6128 Succursale Centre-Ville Montreal Quebec Canada H3C 3J7;

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