Role of defects in enhanced Fermi level pinning at interfaces between metals and transition metal dichalcogenides

摘要

Density functional theory calculations are performed to explore the nature of the contact between metal electrodes and defected monolayer MoSe_2. Partial Fermi level pinning is observed at perfect MoSe_2/metal interfaces. Both As- and Br-substituted MoSe_2 will induce extra bands in valence band and conduction band, respectively, which exerts influence on the Schottky barrier height. An enhanced partial Fermi level pinning occurs when As- and Br-substituted MoSe_2 make contacts with metal electrodes. Se vacancy in the MoSe_2 layer can induce a large amount of interfacial states in the band gap of the MoSe_2 layer. As a result, nearly complete Fermi level pinning is observed in Se-vacancy MoSe_2/metal contacts. Our work offers insight into the Fermi level pinning at the interfaces between two-dimensional materials and metal electrodes, which is important for the applications of two-dimensional materials in nanoelectronic devices with good performance.