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Electronic band structure of cuprous and silver halides: An all-electron GW study

机译:亚美和卤化银的电子带结构:全电子GW研究

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摘要

Group IB metal halides (CuX and AgX, X = Cl, Br, and I) are widely used in optoelectronic devices and photochemical catalysis due to their appropriate optical and electronic properties. First-principles calculations have confronted difficulties in accurately predicting their electronic band structures. Here, we study CuX and AgX with many-body perturbation theory in the GW approximation, implemented in the full-potential linearized augmented plane waves (FP-LAPW) framework. Comparing the quasiparticle band structures calculated with the default LAPW basis and the one extended by high-energy local orbitals (HLOs), denoted as LAPW+HLOs, we find that it is crucial to include HLOs to achieve sufficient numerical accuracy in GW calculations of these materials. Using LAPW+HLOs in semilocal density functional approximation based GW(0) calculations leads to good agreement between theory and experiment for both band gaps and the splitting between metal (Cu or Ag) d and X-p states. This work emphasizes the importance of numerical accuracy in the description of unoccupied states for quasiparticle band structure of materials with the d(10) electronic configuration.
机译:Group IB金属卤化物(CUX和AGX,X = CL,BR和I)广泛用于光电器件和由于其适当的光学和电子特性而导致的光化学催化。第一原理计算在准确预测其电子频带结构方面对抗困难。在这里,我们在GW近似下研究了CUX和AGX,在GW近似下,在全电位线性化增强平面波(FP-LAPW)框架中实现。比较用默认LAPW计算的Quasipartice频带结构以及由高能本地轨道(HLOS)扩展的Quasiparticle频带结构,表示为LAPW + HLOS,我们发现包括HLO在GW计算中获得足够的数值准确性至关重要材料。在半透明密度近似的基于GW(0)的GW(0)计算中使用LAPW + HLO可以在理论和实验之间进行良好的一致性,以及带间隙和金属(Cu或Ag)D和X-P状态之间的分裂。这项工作强调了数值准确性在与D(10)电子配置的材料的Quasiparticle带结构的描述描述中的重要性。

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  • 来源
    《Physical review》 |2019年第20期|205123.1-205123.10|共10页
  • 作者

    Zhang Min-Ye; Jiang Hong;

  • 作者单位

    Peking Univ Beijing Natl Lab Mol Sci Coll Chem & Mol Engn Beijing 100871 Peoples R China;

    Peking Univ Beijing Natl Lab Mol Sci Coll Chem & Mol Engn Beijing 100871 Peoples R China;

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  • 正文语种 eng
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