Robust helical edge transport in quantum spin Hall quantum wells

摘要

We show that edge-state transport in semiconductor-based quantum spin Hall systems is unexpectedly robust to magnetic fields. The origin for this robustness lies in an intrinsic suppression of the edge-state g-factor and the fact that the edge-state Dirac point is typically hidden in the valence band. A detailed k.p band-structure analysis reveals that both InAs/GaSb and HgTe/CdTe quantum wells exhibit such buried Dirac points for a wide range of well thicknesses. By simulating transport in a disordered system described within an effective model, we demonstrate that edge-state transport remains nearly quantized up to large magnetic fields, consistent with recent experiments.