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Interlayer hybridization and moire superlattice minibands for electrons and excitons in heterobilayers of transition-metal dichalcogenides

机译:过渡金属二卤化物异质双层中电子和激子的层间杂交和莫尔超晶格微带

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摘要

Geometrical moire patterns, generic for almost aligned bilayers of two-dimensional crystals with similar lattice structure but slightly different lattice constants, lead to zone folding and miniband formation for electronic states. Here, we show that moire superlattice (mSL) effects in MoSe2/WS2 and MoTe2/MoSe2 heterobilayers that feature alignment of the band edges are enhanced by resonant interlayer hybridization, and anticipate similar features in twisted homobilayers of transition-metal dichalcogenides (TMDs), including examples of narrow minibands close to the actual band edges. Such hybridization determines the optical activity of interlayer excitons in TMD heterostructures, as well as energy shifts in the exciton spectrum. We show that the resonantly hybridized exciton energy should display a sharp modulation as a function of the interlayer twist angle, accompanied by additional spectral features caused by umklapp electron-photon interactions with the mSL. We analyze the appearance of resonantly enhanced mSL features in absorption and emission of light by the interlayer exciton hybridization with both intralayer A and B excitons in MoSe2/WS2, MoTe2/MoSe2, MoSe2/MoS2, WS2/MoS2, and WSe2/MoSe2.
机译:对于具有相似晶格结构但晶格常数略有不同的二维晶体的几乎对准的双层来说,几何莫尔图案通常会导致区域折叠和电子态的微带形成。在这里,我们表明,通过共振层间杂交增强了MoSe2 / WS2和MoTe2 / MoSe2异质双分子层中带边缘对齐的莫尔超晶格(mSL)效应,并预测了过渡金属二卤化物(TMDs)扭曲同质双分子层中的相似特征,包括靠近实际频带边缘的窄小频带示例。这种杂交决定了TMD异质结构中层间激子的光学活性,以及​​激子光谱中的能量转移。我们表明,共振杂化的激子能量应显示出作为层间扭曲角的函数的尖锐调制,并伴随着由umklapp电子-光子与mSL相互作用引起的其他光谱特征。我们通过在MoSe2 / WS2,MoTe2 / MoSe2,MoSe2 / MoS2,WS2 / MoS2和WSe2 / MoSe2中与层内A和B激子进行层间激子杂交来分析在光吸收和发射中共振增强的mSL特征的出现。

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  • 来源
    《Physical review. B, Condensed Matter And Materals Physics》 |2019年第12期|125424.1-125424.24|共24页
  • 作者单位

    Univ Manchester, Natl Graphene Inst, Booth St E, Manchester M13 9PL, Lancs, England|Univ Nacl Autonoma Mexico, Ctr Nanociencias & Nanotecnol, Apartardo Postal 14, Ensenada 22800, Baja California, Mexico;

    Univ Manchester, Natl Graphene Inst, Booth St E, Manchester M13 9PL, Lancs, England|Univ Manchester, Henry Royce Inst Adv Mat, Manchester M13 9PL, Lancs, England;

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