机译:低序Sb_2Te_3的拓扑表面状态下低电导率下没有强定位
Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA|SLAC Natl Accelerator Lab, Stanford Inst Mat & Energy Sci, Menlo Pk, CA 94025 USA;
Natl Univ Singapore, Dept Phys, Singapore 117551, Singapore|Natl Univ Singapore, Ctr Adv 2D Mat & Graphene Res Ctr, Singapore 117546, Singapore;
Natl Univ Singapore, Dept Phys, Singapore 117551, Singapore|Natl Univ Singapore, Ctr Adv 2D Mat & Graphene Res Ctr, Singapore 117546, Singapore;
Rutgers State Univ, Dept Mat Sci & Engn, Piscataway, NJ 08854 USA;
SLAC Natl Accelerator Lab, Stanford Inst Mat & Energy Sci, Menlo Pk, CA 94025 USA|Stanford Univ, Dept Phys, Stanford, CA 94305 USA|MIT, Dept Phys, Cambridge, MA 02139 USA|Sci Philanthropy Alliance, 480 South Calif Ave, Palo Alto, CA 94306 USA;
Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA;
Natl Univ Singapore, Dept Phys, Singapore 117551, Singapore|Natl Univ Singapore, Ctr Adv 2D Mat & Graphene Res Ctr, Singapore 117546, Singapore|Yale NUS Coll, Singapore 138614, Singapore;
SLAC Natl Accelerator Lab, Stanford Inst Mat & Energy Sci, Menlo Pk, CA 94025 USA|Stanford Univ, Dept Phys, Stanford, CA 94305 USA;
机译:在低疾病SB_2TE_3的拓扑表面状态下在低导电性下缺乏强烈定位
机译:在低疾病SB2Te3的拓扑表面状态下在低电导率下缺乏强烈定位
机译:在低紊乱的分子半导体中存在长末端烷基链的热导率的强烈抑制
机译:拓扑绝缘体新阶段的超导,磁阻,磁异常和晶体结构Bi_2se_3和Sb_2te_3
机译:无需混合即可在属两个表面上实现平滑流动。
机译:Bi2Se3拓扑绝缘体纳米花中的局部表面等离子体激元增强光热转化
机译:在低疾病SB2Te3的拓扑表面状态下在低电导率下缺乏强烈定位