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机译:直接观察高掺杂半导体中的导带等离子体激元和相关的Burstein-Moss位移:Ga掺杂ZnO的STEM-EELS研究
Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, P. O. Box 1048 Blindern, N-0316 Oslo, Norway;
Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, P. O. Box 1048 Blindern, N-0316 Oslo, Norway;
Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, P. O. Box 1048 Blindern, N-0316 Oslo, Norway;
Institute of Photonics and Optoelectronics, National Taiwan University, No. 1, Section 4, Roosevelt Road, Taipei, 10617 Taiwan;
Institute of Photonics and Optoelectronics, National Taiwan University, No. 1, Section 4, Roosevelt Road, Taipei, 10617 Taiwan;
Semiconductor Research Center, Wright State University, Dayton, Ohio 45432, USA;
Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, P. O. Box 1048 Blindern, N-0316 Oslo, Norway;
Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, P. O. Box 1048 Blindern, N-0316 Oslo, Norway;
Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, P. O. Box 1048 Blindern, N-0316 Oslo, Norway;
机译:直接观察导电带等离子体和高掺杂半导体中的相关伯士脂 - 苔藓转变:对GA掺杂ZnO的茎鳗化研究
机译:应力掺杂镓掺杂ZnO薄膜中光学带隙的反常位移:实验和第一性原理研究
机译:高掺杂金红石型SnO2的各向异性光学性质:价带对Burstein-Moss位移的贡献
机译:通过二维孔阵列激发的Ga掺杂ZnO薄膜上的长波长红外表面等离子体激元,以实现非凡的光学传输
机译:利用表面增强拉曼散射研究掺杂Ga的ZnO纳米粒子与分子之间的电荷转移:掺杂引起的带隙收缩。
机译:半导体中的自补偿:Ga掺杂的ZnO中的Zn空位