Electronic structure and transport properties of CrAs/GaAs/CrAs trilayers from first principles theory

摘要

We present a theoretical study of the transport properties of a CrAs/GaAs/CrAs trilayer. The theory was based on a first principles method for calculating the electronic structure, in combination with a Kubo-Landauer approach for calculating the transport properties in a current perpendicular to the plane geometry. We have also investigated the electronic structure and the magnetic properties of this trilayer, with special focus on electronic and magnetic properties at the CrAs/GaAs interface. Finally, we have studied the effects of chemical disorder on the transport properties, in particular the influence of As antisites at both the Cr and Ga sites.