Electron―longitudinal optical phonon interaction between Landau levels in semiconductor heterostructures

摘要

Calculations of electron-longitudinal optical phonon scattering rates between Landau levels in semiconductor heterostructures with a magnetic field applied parallel to the direction of confinement are reported. We have found that the scattering rate shows strong oscillations as a function of the applied field, depending on the configuration of the energy states in the structure. In the limit B→0, the expressions for the intersubband scattering rate between Landau levels reduce to those obtained in the case of two-dimensional subbands at B = 0 T.