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SiGe/Si(001) Stranski-Krastanow islands by liquid-phase epitaxy: Diffuse x-ray scattering versus growth observations

机译:SiGe / Si(001)Stranski-Krastanow岛的液相外延:扩散X射线散射与生长观察

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摘要

Ex situ observed growth stages of LPE-SiGe/Si(001) Stranski-Krastanow islands with a germanium content of 10% give clear evidence of a rapid shape transition at one third of the final island height. The island shape changes from a lenslike type without a top facet to truncated pyramids with {111} side facets and an (001) top facet. High-resolution x-ray diffraction has been applied to islands with higher germanium content of about 30%. Experimental results are compared with respective kinematical scattering simulations based on finite element calculations for the strain field. From these simulations the three-dimensional germanium composition profile inside the islands can be extracted and it substantiates a similar growth scenario with a distinct shape transition at one third of the final island height also for this germanium concentration range. We attribute the observed finite island size to a distinct nucleation problem at the island bottom caused by exceptional high strain energy around the island corners in combination with a strain driven wetting layer depression.
机译:异位观察到的锗含量为10%的LPE-SiGe / Si(001)Stranski-Krastanow岛的生长阶段清楚地证明了在最终岛高的三分之一处形状快速转变。岛的形状从无顶面的类似透镜的类型更改为具有{111}侧面和(001)顶面的圆锥台。高分辨率X射线衍射已应用于锗含量约30%的岛。将实验结果与基于应变场的有限元计算的运动散射模拟进行了比较。从这些模拟中,可以提取出孤岛内部的三维锗成分分布图,并且在该锗浓度范围内,也证明了在最终孤岛高度的三分之一处具有明显形状过渡的相似生长场景。我们将观察到的有限岛尺寸归因于岛底部的独特成核问题,该问题是由岛角周围异常高的应变能与应变驱动的浸润层压降共同引起的。

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