Role of two-hole localization in anion-vacancy formation on the (110) surfaces of InP and GaAs at the third regime of Langmuir evaporation

摘要

We study the significant Fermi-level effects on the formation rate of anion vacancies on vacuum-cleaved III-V semiconductor surfaces revealed by Semmler et al. [J. Chem Phys. 114, 445 (2001)], by applying the two-hole localization mechanism of bond rupture on semiconductor surfaces. It is shown that the increasing rate of vacancy formation with hole concentration results from the enhanced rate of two-hole localization at surface anion sites due to reduced energy separations between the Fermi energy and the energy level of the surface state composed of occupied anion dangling bonds.