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首页> 外文期刊>Physical review. B, Condensed Matter And Materials Physics >Influence of exchange interaction on spin-dependent transport through a single quantum dot doped with a magnetic ion
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Influence of exchange interaction on spin-dependent transport through a single quantum dot doped with a magnetic ion

机译:交换相互作用对通过掺杂磁性离子的单个量子点的自旋依赖性输运的影响

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A quantum theory of single-electron tunneling through a quantum dot (QD), doped with a Mn~(2+) ion and weakly coupled to ferromagnetic (FM) leads in the Coulomb blockade regime, is developed using the sequential tunneling approach and assuming that spin flips do not occur. It predicts a spin-injection-induced magnetization and a spin-dependent current. The spin polarization of the current and the tunneling magnetoresistance (TMR) can be well controlled by a bias voltage and strongly enhanced by the electron-Mn exchange interaction and the spin selectivity of the leads. An appropriate choice of these parameters yields a highly polarized current even when the FM source is not 100% polarized. Analytical expressions for the magnetization, spin-dependent current, spin polarization, and the TMR are derived for zero magnetic field. When the QD is subjected to a strong magnetic field, the numerical calculations predict an oscillatory behavior of the TMR as a function of the bias voltage.
机译:使用顺序隧穿方法并假设在量子点(QD)中掺杂Mn〜(2+)离子并弱耦合至铁磁(FM)引线的单电子隧穿的量子理论得到发展。不会发生旋转翻转。它可以预测自旋注入引起的磁化强度和自旋相关电流。电流的自旋极化和隧穿磁阻(TMR)可以通过偏置电压很好地控制,并且通过电子-Mn交换相互作用和引线的自旋选择性可以大大增强。这些参数的适当选择即使​​在FM源不是100%极化的情况下也会产生高极化电流。对于零磁场,得出了磁化强度,自旋相关电流,自旋极化和TMR的解析表达式。当QD受到强磁场作用时,数值计算可预测TMR的振荡行为是偏置电压的函数。

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