首页> 外文期刊>Physical review. B, Condensed Matter And Materials Physics >Superconducting gap and pseudogap for overdoped Bi_(2-x)Pb_xSr_2CaCu_2O_(8+δ) using 60 ns time-scale short-pulse interlayer tunneling spectroscopy
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Superconducting gap and pseudogap for overdoped Bi_(2-x)Pb_xSr_2CaCu_2O_(8+δ) using 60 ns time-scale short-pulse interlayer tunneling spectroscopy

机译:使用60 ns时标短脉冲层间隧穿光谱技术对Bi_(2-x)Pb_xSr_2CaCu_2O_(8 +δ)掺杂的超导间隙和拟间隙

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摘要

We have measured the interlayer tunneling spectra for overdoped Bi_(2-x)Pb_xSr_2CaCu_2O_(8+δ) single crystals with a doping level p ranging from 0.20 to 0.22 and a T_c from 80 to 67 K using a small mesa structure and a 60 ns time-scale short-pulse technique. It is found that, with increasing doping, the superconducting gap decreases from 46 to 18 meV, while the pseudogap decreases from 42 to 10 meV. The result indicates the existence of the pseudogap in the overdoped region even at a doping level p higher than 0.19, at which the pseudogap is expected to disappear in some generic phase diagram models. Furthermore, the values obtained for the superconducting gap, normal tunneling resistance, and the maximum Josephson current indicate the likeliness of the inhomogeneous superconducting state even in the overdoped region.
机译:我们使用小台面结构和60 ns测量了掺杂水平为0.20至0.22且T_c为80至67 K的掺杂Bi_(2-x)Pb_xSr_2CaCu_2O_(8 +δ)单晶的层间隧穿光谱时标短脉冲技术。发现随着掺杂的增加,超导间隙从46 meV减小到18 meV,而伪间隙从42 meV减小到10 meV。结果表明,即使在高于0.19的掺杂水平p下,在超掺杂区域中也存在伪间隙,在伪水平处预期伪间隙在某些通用相图模型中会消失。此外,获得的超导间隙,正常隧穿电阻和最大约瑟夫森电流的值即使在超掺杂区域中也显示出不均匀超导状态的可能性。

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