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Long-range ferromagnetic correlations between Anderson impurities in a semiconductor host: Quantum Monte Carlo simulations

机译:半导体主体中安德森杂质之间的远距离铁磁相关性:量子蒙特卡洛模拟

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摘要

We study the two-impurity Anderson model for a semiconductor host using the quantum Monte Carlo technique. We find that the impurity spins exhibit ferromagnetic correlations with a range which can be much more enhanced than in a half-filled metallic band. In particular, the range is longest when the Fermi level is located above the top of the valence band and decreases as the impurity bound state becomes occupied. Comparisons with the photoemission and optical absorption experiments suggest that this model captures the basic electronic structure of Ga_(1-x)Mn_xAs, the prototypical dilute magnetic semiconductor (DMS). These numerical results might also be useful for synthesizing DMS or dilute oxide ferromagnets with higher Curie temperatures.
机译:我们使用量子蒙特卡洛技术研究半导体主机的两个杂质的安德森模型。我们发现,杂质自旋表现出的铁磁相关性范围比半填充金属带中的强得多。特别地,当费米能级位于价带的顶部上方时该范围最长,并且随着杂质结合态被占据而减小。与光发射和光吸收实验的比较表明,该模型捕获了Ga_(1-x)Mn_xAs(一种典型的稀磁半导体)的基本电子结构。这些数值结果也可能对合成居里温度更高的DMS或稀氧化物铁磁体有用。

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