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首页> 外文期刊>Physical review. B, Condensed Matter And Materials Physics >Evolution of charge carriers for transport in electron-doped cuprate superconductor La_(1.89)Ce_(0.11)CuO_4 thin films
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Evolution of charge carriers for transport in electron-doped cuprate superconductor La_(1.89)Ce_(0.11)CuO_4 thin films

机译:掺杂电子的铜酸盐超导体La_(1.89)Ce_(0.11)CuO_4薄膜中用于传输的电荷载流子的演化

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To reveal the evolution of charge carriers to the transport in La_(1.89)Ce_(0.11)CuO_4, we carefully measured the temperature and magnetic-field dependences of the Hall resistivity (ρ_(xy)) and longitudinal resistivity (ρ_(xx)). Two sign reversals of the Hall resistivity are observed in the normal state. In addition, the ρ_(xy) and ρ_(xx) show B~2 dependence in the temperature region of 40-50 K, similar to the behavior of the compensated metal; that is, the effective concentrations of electrons (n_e~*) and holes (n_h~*) are nearly equal. The possible origin of the sign reversal is attributed to the competition between n_e~*_h~* and τ_e/τ_h (the relaxation time ratio of electrons to holes), and the change of cyclotron orbits induced by the magnetic field is also considered.
机译:为了揭示电荷载流子在La_(1.89)Ce_(0.11)CuO_4中迁移的演化,我们仔细测量了霍尔电阻率(ρ_(xy))和纵向电阻率(ρ_(xx))的温度和磁场依赖性。 。在正常状态下会观察到霍尔电阻率的两个符号反转。另外,ρ_(xy)和ρ_(xx)在40-50 K的温度范围内表现出B〜2依赖性,类似于补偿金属的行为。也就是说,电子(n_e〜*)和空穴(n_h〜*)的有效浓度几乎相等。符号反转的可能起源归因于n_e〜* / n_h〜*与τ_e/τ_h(电子与空穴的弛豫时间比)之间的竞争,并且还考虑了磁场引起的回旋轨道的变化。

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